The fabrication process of the silicone-polyimide hybrid MEA is shown in
Figure 1 . A 1-μm-thick silicon oxide coating was deposited on a Si wafer by plasma-enhanced chemical vapor deposition (PECVD) as a sacrificial layer to be used for releasing the structure in buffered hydrofluoric acid (BHF). A 10-μm-thick lower polyimide (PI2525; HD Microsystems, Parlin, NJ) layer was coated on the Si wafer and cured on a hot plate. Three layers of titanium, gold, and titanium (500Å, 4000 Å, and 1000 Å, respectively) were evaporated in that order on the lower polyimide layer with an E-gun (ZZS550-2/D; Maestech, GyungGi-Do, Korea). Photolithography was used to make stimulation electrode sites and external connection pads and to create conduction lines between them. The upper titanium layer (1000 Å) was used as an etch mask during the site and pad opening process, and the lower titanium layer was used as an interlayer for conducting gold adhesion on the polyimide. After patterning of the metal layers, a 6-μm-thick upper polyimide layer was added under stress-free conditions. An additional 1000-Å titanium layer was evaporated on top of this upper polyimide layer to be used as an etch-stop mask to define the MEA outline. The whole structure was defined, and sites and pads were opened by using reactive ion etching (RIE). The polyimide MEA structure was released with buffered hydrofluoride solution (NH
4F: HF = 7:1). Typically, the etching process for releasing the structure took only a few seconds, and so the top titanium metal layer exposed to the etching solution during this time was able to protect the underlying gold electrode layer. The etch stop was detected by observing the color of the composite metallic layers changing from metallic silver to yellowish gold, which represented the thickness reduction of the titanium overlayer.
The released polyimide MEA structure was then mounted on a photoresist-coated Si wafer and became firmly attached through photoresist curing. For improved hybridization of the polyimide and silicone elastomer, oxygen plasma treatment was applied using RIE for 3 minutes under 0.1 Torr pressure at 100 W of power with 100 cm
3 min
−1 of oxygen inflow. Oxygen plasma in an RIE process is known to change a hydrophobic polyimide surface of the polyimide to a hydrophilic one, which may enhance the adhesion of the silicone elastomer to the polyimide surface by chemical bonds formed from surplus bonding chains.
14 15 Then, the polyimide MEA was dehydrated on a hotplate at 120°C for 3 minutes.
The silicone elastomer (MED-4211; Nusil Technology, Carpinteria, CA) was applied to the pretreated surface of the polyimide MEA by spin coating. The spin speed was increased gradually from 0 to 4000 rpm for 120 seconds and kept at 4000 rpm for an additional 30 seconds. This resulted in a deposited silicone elastomer layer with approximately 64-μm thickness on the polyimide MEA, and the overall thickness of the silicone-polyimide hybrid MEA became approximately 80 μm.
The silicone-coated wafer was kept in a vacuum chamber for 30 minutes to flatten the curved silicone surface generated by spinning and to eliminate any remaining air bubbles in the silicone elastomer. Final curing was done on a 120°C hot plate for 30 minutes. The sample was then kept at room temperature for 24 hours. The final structure was meticulously defined by a precise manual cutting of the silicone layer along the polyimide edge. Each electrode was released by soaking the wafer in acetone to dissolve the adhesive photoresist, and the residues were cleaned up by methanol and distilled water.